Several artificial test cases are investigated in order to determine the sensitivity of the method and the magnitude of the effect of lifetime distribution. With suitable input regarding the optical properties, doping profiles, recombination behaviour and sheet resistance of the passivated and metallized surfaces involved this combined model can be used to predict the total cell efficiency of mc-Si solar cells and other cells with significant lateral variations in wafer quality. By using a combination of one-dimensional device modelling (cmd-PC1D 6) and finite element circuit modelling (Griddler 2) we are able to simulate the total IV characteristics of a solar cell based on input from minority carrier lifetime images. In this paper we present a novel approach to investigate the influence of non-uniformity in the minority carrier lifetime of c-Si wafers on solar cell efficiency.
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